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Basic measurement of dynamic properties of bipolar and unipolar transistors
Lang, Radek ; Šotner, Roman (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor’s thesis is to describe the dynamic parameters of semiconductor devices. The other aim is to build a measuring workplace, on which is possible to carry out measurement of dynamic properties of bipolar and unipolar transistors. The bachelors’s thesis also solves a design and a production of an universal product, on which measurements are carried out. Individual measurement is automated and individual devices are connected to the product and results are controlled by computer analysis.
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Integrated temperature sensor bipolar core
Fránek, Jakub ; Prokop, Roman (referee) ; Kledrowetz, Vilém (advisor)
Cílem této práce je popsat možné způsoby realizace teplotního senzoru na křemíkovém čipu v běžných CMOS výrobních technologiích a představit konkrétní implementaci analogového jádra teplotního senzoru využívajícího bipolární tranzistory ve výrobní technologii TSMC 110. Techniky jako chopping, dynamic element matching nebo trimování byly použity k navržení obvodů, jejichž simulovaná 3 přesnost měření je ±3.5 °C bez trimování nebo ±0.6 °C s po jedné trimovací operaci napříč vojenským teplotním rozsahem. Navržené obvody zabírají pouze 0.012 mm čtverečních plochy čipu a jejich celkové parametry jsou srovnatelné s výsledky současných publikovaných prací.
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Basic measurement of dynamic properties of bipolar transistors
Repčík, Juraj ; Šteffan, Pavel (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor thesis is to analyze theoretical basis of measurement bipolar transistors. First, this project focuses on the static parameters of a bipolar transistor, setting DC voltages and currents in an electric circuit (Q-point, operating point). Second it deals with measurement of selected dynamic properties of amplifier with bipolar transistor. Theoretical knowledge is presented on the practical circuit by a laboratory measurement of the selected properties. The measurement is automated using a computer with LabVIEW software. User programs are developed for measuring the V-A characteristics of a bipolar transistor and for measuring selected dynamic properties of the amplifier. The thesis points out a convenient approach in development of new software for automated measurement using graphical programming in LabVIEW.
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Basic measurement of dynamic properties of bipolar and unipolar transistors
Lang, Radek ; Šotner, Roman (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor’s thesis is to describe the dynamic parameters of semiconductor devices. The other aim is to build a measuring workplace, on which is possible to carry out measurement of dynamic properties of bipolar and unipolar transistors. The bachelors’s thesis also solves a design and a production of an universal product, on which measurements are carried out. Individual measurement is automated and individual devices are connected to the product and results are controlled by computer analysis.
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Integrated Temperature Sensor Bipolar Core
Fránek, Jakub
Analog front-end of a bipolar transistor based smart temperature sensor was designed in 110 nm CMOS processing technology TSMC 110 and verified using simulation taking PVT variation into account. The analog front-end of the sensor achieves 3s inaccuracy of +-3.5 °C untrimmed or +-0.7 °C after single point trim over the military temperature range (-55 °C to 125 °C), requiring supply voltage of 2.7-3.63 V, consuming as little as 1μW at 1 S/s and taking up less than 0:012mm2.
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Integrated temperature sensor bipolar core
Fránek, Jakub ; Prokop, Roman (referee) ; Kledrowetz, Vilém (advisor)
Cílem této práce je popsat možné způsoby realizace teplotního senzoru na křemíkovém čipu v běžných CMOS výrobních technologiích a představit konkrétní implementaci analogového jádra teplotního senzoru využívajícího bipolární tranzistory ve výrobní technologii TSMC 110. Techniky jako chopping, dynamic element matching nebo trimování byly použity k navržení obvodů, jejichž simulovaná 3 přesnost měření je ±3.5 °C bez trimování nebo ±0.6 °C s po jedné trimovací operaci napříč vojenským teplotním rozsahem. Navržené obvody zabírají pouze 0.012 mm čtverečních plochy čipu a jejich celkové parametry jsou srovnatelné s výsledky současných publikovaných prací.
|
|
|
Basic measurement of dynamic properties of bipolar and unipolar transistors
Lang, Radek ; Šotner, Roman (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor’s thesis is to describe the dynamic parameters of semiconductor devices. The other aim is to build a measuring workplace, on which is possible to carry out measurement of dynamic properties of bipolar and unipolar transistors. The bachelors’s thesis also solves a design and a production of an universal product, on which measurements are carried out. Individual measurement is automated and individual devices are connected to the product and results are controlled by computer analysis.
|
|
|
Basic measurement of dynamic properties of bipolar transistors
Repčík, Juraj ; Šteffan, Pavel (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor thesis is to analyze theoretical basis of measurement bipolar transistors. First, this project focuses on the static parameters of a bipolar transistor, setting DC voltages and currents in an electric circuit (Q-point, operating point). Second it deals with measurement of selected dynamic properties of amplifier with bipolar transistor. Theoretical knowledge is presented on the practical circuit by a laboratory measurement of the selected properties. The measurement is automated using a computer with LabVIEW software. User programs are developed for measuring the V-A characteristics of a bipolar transistor and for measuring selected dynamic properties of the amplifier. The thesis points out a convenient approach in development of new software for automated measurement using graphical programming in LabVIEW.
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